wnm 07n60 /WNM07N60F 600v n - channel mosfet description the wnm07n60/WNM07N60F is n - channel enhancement mos field effect transistor. uses advanced high voltage mosfet process and design to provide excellent r ds (on) with low gate charge. this device is suita ble for use in popular a c - dc applications, p ower switching application and a wide variety of other applications. features ? 600v@t j =25 ? typ. r ds( on ) = 1.0 ? ? low gate charge ? 100% avalanche tested ? 100% r g tested order i nformation device package units/tube wnm07n60_3/t to - 220 50 WNM07N60F_3/t to - 220 - f 50 absolution maximum ratings t a =25 c unless otherwise noted parameter symbol wnm07n60 wnm07n60 f unit drain - source voltage v ds 600 600 v gate - source voltage v gs 30 30 continuous drain current t c =25 c i d 7 7* a t c =100 c 4.8 4.8* pulsed drain current i dm 28 a single p ulsed avalanche energy c e as 124 mj peak diode recovery dv/dt dv/dt 5 v/ ns power dissipation b t c =25 c p d 156 34 w derate above 25 c 1.24 0.27 w/ c operating and storage temperature range t j ,t stg - 55~150 c lead temperature t l 260 c thermal resistance r atings maximum junction - to - ambient a r ja 6 5 6 5 c/w maximum case to sink r cs 0.5 maximum junction - to - case r jc 0.8 3.6 to - g g d s g d s to - 22 0 to - 220 f d s y =year ww =week y =year ww =week w n m 0 n 60 = devices code 7 wnm 0 n6 0 f =devices code 7 7 c 7 7 7 7 7 7 7 7 7 7 o y y *drain current limited by maximum jun ction temperature . 1 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electronics characteristics (t a =2 5 o c , unless otherwise noted) notes: a. the value of r ja is measured with the device in a still air environment with t a =25c. b. the power dissipation p d is based on t j(max) =150c, using junction - to - case thermal resistance . c. . d. l= 8.2 mh, i as = 5 .5 a, v dd = 50 v, r g =25, starting t j =25c . pulse width 3 8 0s, duty cycle 2% . parameter symbol test conditions min typ max unit off characteristics drain - to - source breakdo wn voltage b v dss v gs = 0 v, i d = 250 u a 600 v breakdown voltage temperature coefficient d b vdss / d t j i d = 250 m a, referenced to 25 0 c 0.72 v/ 0 c zero gate voltage drain current i dss v ds = 600 v, v gs = 0 v 1 ua gate - t o - s ource leakage current i gss v ds = 0 v, v gs = 3 0 v 1 00 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = 2 5 0 u a 3.0 4.0 5.0 v drain - t o - s ource on - r esistance d r ds(on) v gs = 10 v , i d = 3.5 a 1.0 1.2 ? d namic parameters input capacitance c iss v gs = 0 v, f = 1.0 mhz, v d s = 25 v 930 pf output capacitance c oss 93 reverse transfer capacitance c rss 7.8 total gate charge q g(tot) v gs = 10 v, v ds = 480 v, i d = 3.5 a 17.8 nc threshold gate charge q g(th) 3.55 gate - to - source charge q gs 5.2 gate - to - drain ch arge q gd 7.1 gate resistance r g v gs =0v,v ds =0v,f=1mhz 4. 8 ? switching characteristics turn - on delay time t d( on ) v gs = 10 v, v ds = 30 0 v, i d = 7.0 a , r g = 25 ? 27.7 ns rise time t r 42.7 turn - off delay time t d( off ) 48.53 fall time t f 34.13 drain to source diode characteristics and maximum ratin gs forward voltage v sd v gs = 0 v, i s = 1.0 a 0.74 1.5 v maximum body - diode continuous current i s 7 a maximum body - diode pulsed current i sm 28 a body diode reverse recovery time t rr i f =7a,di/dt=100a/ u s, v ds =100v 370 ns body diode reverse recovery charge q rr i f =7a,di/dt=100a/ u s, v ds =100v 2.35 u c wnm 07n60 /WNM07N60F 2 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (t a =25 o c, unless otherwise noted) output c haracteristics on - r esistance vs. d rain c urrent breakdown voltage vs. junction temperature transfer c haracteristics on - resistance vs. junction temperature threshold voltage vs. temperature 0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 v gs =6.5v v gs =10v v gs =5.5v v gs =6v i ds -drain to source current (a) v ds -drain to source voltage (v) 2 4 6 8 10 1 10 100 vds =40v 150 o c 25 o c -55 o c i ds -drain to source current (a) v gs -gate to source voltage (v) 0 2 4 6 8 10 12 14 16 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v gs =10v r dson -on resistance ( w ) i ds -drain to source current(a) -50 0 50 100 150 0.5 1.0 1.5 2.0 2.5 v gs =10v,i d =3.5a r ds(on) -on-resistance( w ) temperature( o c) -100 -50 0 50 100 150 200 1.00 1.05 1.10 1.15 1.20 1.25 1.30 i d =250ua breakdown voltage (normalized) temperature( o c) -100 -50 0 50 100 150 200 2.4 2.8 3.2 3.6 4.0 4.4 4.8 gate threshod voltage(v) temperature( o c) wnm 07n60 /WNM07N60F 3 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
capacitance safe operating power (WNM07N60F) body diode forward voltage safe operating power (wnm07n60 ) gate charge charac teristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 150 o c 25 o c i sd -source to drain current(a) v sd -source to drain voltage(v) 1 10 1 10 100 1000 10000 f=1mhz crss coss ciss capacitance(pf) v ds -drain to source voltage(v) 0 4 8 12 16 20 0 2 4 6 8 10 v ds =480v, i d =3.5a gate voltage(v) gate charge(nc) 0.01 0.1 1 10 100 1 10 100 1000 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m s 0.01 0.1 1 10 100 1 10 100 1000 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t c =25c 100 m s 1s -drain to source current (a) v ds -drain to source voltage(v) -drain to source current (a) v ds -drain to source voltage(v) wnm 07n60 /WNM07N60F 4 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
transient thermal r esponse (junction - to - case WNM07N60F) transient thermal r esponse (junction - to - case wnm07n60) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) z q q q q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) z q q q q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d =0. 8 c/w =3. 6 c/w wnm 07n60 /WNM07N60F 5 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
g a t e cha r g e t es t c ir cu i t & w av e f o r m res i s t i v e s w it c hi n g t es t c irc u i t & w ave f o r m s u n c la m p e d i n d u c t i v e s w i t ch i ng t es t c irc u i t & w a ve f o r ms wnm 07n60 /WNM07N60F 6 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
p ea k d i o de r ec o v e r y dv / d t t es t c irc u i t & w ave f o r m s wnm 07n60 /WNM07N60F 7 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions to-220 to-220f wnm 07n60 /WNM07N60F 8 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
|
